<$em.i-conclue2toi ^piodacti, ijna. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 plastic npn silicon medium-power transistors . . . useful for medium voltage applications requiring high fr such as converters and extended range amplifiers. maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous base current total power dissipation @ tc = 25 c derate above 25c operating and storage junction temperature range symbol vceo vcb veb ic ib pd tj. tstg mje341 150 175 3.0 MJE344 200 200 5.0 500 250 20 0.16 -65 to-*- 150 unit vdc vdc vdc madc madc watts w/c c thermal characteristics characteristic thermal resistance, junction to case symbol ejc max 6.25 unit "c/w mje341 MJE344 0.5 ampere power transistors npn silicon 150-200 volts 20 watts to-225aa type q_ <, i? z lu ql c o o i o o 1.0 0.5 0.2 0.1 0.05 0.02 0.01 t 'j ~ 150 ^j v *% v 1 l *i d second breakdown limp bonding wire limit thermal limit tc = 25c v \10 \ \ ii ^5c \~ all v \s ? all 10 20 30 40 60 100 200 300 vce, collector-emiher voltage (volts) figure 1. active region safe operating area there are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. safe operating area curves indicate ig - vce limits f the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion then the curves indicate. quality semi-conductors the data of figure 1 is based on tj(pk) = 150c;tc is vari- able depending on conditions. second breakdown pulse lim- its are valid for duty cycles to 10% provided tj(p|<) s 150c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown.
mje341 MJE344 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (1c = 1 .0 madc, ib = 0) mje341 MJE344 collector cutoff current (vce = 150vdc, lb = 0) mje341 (vce = 200 vdc, ib = 0) MJE344 collector cutoff current (vcb = 175 vdc, ie = 0) mje341 (vcb = 200 vdc, ie = 0) MJE344 emitter cutoff current MJE344 vceo(sus) 'ceo 'cbo 'ebo 150 200 - ? i ? 1.0 1.0 0.3 0.1 0.1 0.1 vdc madc madc madc on characteristics dc current gain (ic = 10madc, vce = 10 vdc) mje341 (ic = 50madc, vce= 10 vdc) mje341 MJE344 (ic = 150 madc, vce = 10 vdc) mje341 collector-emitter saturation voltage (ic = 50 madc, ib = 5.0 madc) MJE344 (ic = 1 50 madc, ib = 1 5 madc) mje341 base-emitter on voltage (ic = 50 madc, vce = 10 vdc) hfe vce(sat) vbe(on) 20 25 30 20 ? ? ? ? 200 300 ? 1.0 2.3 1.0 ? vdc vdc dynamic characteristics current-gain ? bandwidth product (ic = 50 madc, vce = 25 vdc, f = 10 mhz) output capacitance (vcb = 20 vdc. ie = 0. f = 10 khz) small-signal current gain (ic = 50 madc, vce = 1 vdc. f = 1 -0 khz) it c0b hfe 15 ? 25 ? 15 ? mhz pf 10 1.0 2.03.0 5.07.010 20 5070100 200300 500 ic, collector current (ma) 10 20 30 50 100 200 300 500 ic, collector current (ma) figure 2. dc current gain figure 3. "on" voltages
m notes: 1. dimensioning and tolerancing per ansi y14.sm, 1982. 2. controlling dimension: inch. ?i?j 0.25(0.010)? | a ?| b?| 02 pl dim a b c d f g h j k m q r s u v inches win 0.425 0.295 0.095 0.020 0.115 0.094 0.050 0.015 0.575 5 0.14b 0.045 0.025 0.145 0040 max 0.435 0.305 0.105 0.026 0.130 bsc 0.095 0.025 0.655 rvp 0.158 0,055 0.035 0.155 ? millimeters min 10.80 7,50 2.42 0.51 2.93 2.39 1.27 0.39 14.61 5" 3.76 1.15 0.64 3.69 1.02 max 11.04 7.74 2.66 0.66 3.30 bsc 2,41 0.63 16.63 typ 401 1.39 0.88 3.93 ? |$|o.25(0.010)? | a ?ib"?] style 1: pin1. emitter 2, collector 3, base
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